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| ESJA09 HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. (10kV,12kV/5mA) Outline Drawings Lot No. Cathode Mark o 2.5 o 0.5 Features Ultra high speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 27 min. 10 27 min. Cathode Mark Type Mark Applications Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer) ESJA09-10 Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols ESJA09-12 Condition ESJA09 -10 -12 12 5 Units Repetitive Peak Reverse Voltage Average Output Current Surge Current Junction Temperature Allowable Operation Case Temperature Storage Temperature VRRM IO IFSM Tj Tc Tstg Ta=25C,Resistive Load 10mS Sine-half wave peak value 10 kV mA A C C C 0.5 120 100 -40 to +120 Electrical Characteristics (Ta=25C Unless otherwise specified ) Items Symbols Conditions ESJA09 -10 Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance VF IR trr Cj IF=10mA VR=VRRM Ta=25C,IF=2mA,IR=4mA Ta=25C,VR=0V,f=1MHz 2 0.05 1 -12 42 V A s pF Units ESJA09 Characteristics 30 (10kV,12kV/5mA) Tj=100 ESJA09-10 o C 0.1 ESJA09-12 ESJA09-10 20 IF [mA] 10 ESJA09-12 IR [ A] 0.01 Tj= 25 Tj=100 o C o ESJA09-10 ESJA09-12 C Tj= 25 o C 0 0 20 40 60 80 1E-3 0 4 8 12 16 VF [V] VR [kV] Forward Characteristics 1.0 o Reverse Characteristics 100 Tj= 25 C I R =100 A N=100pcs. o 0.8 Tj=25 C f=1MHz 80 0.6 60 Cj [pF] N [pcs.] ESJA09-10 ESJA09-12 ESJA09-12 0.4 40 ESJA09-10 0.2 20 0.0 0 0 40 80 120 160 200 8 12 16 20 24 28 V Bias [V] V AV [kV] Avalanche Breakdown Voltage Junction Capacitance Characteristics ESJA09-10 100 0.01F Tj= 25 C N=100pcs. o D.U.T N [pcs.] 50 1kohm 150 kohm 100ohm 0 OSCILLO SCOPE ESJA09-12 100 50 IF=2mA 0 IR=4mA 1mA 0 0.00 0.02 0.04 0.06 0.08 0.10 trr ( s) trr Reverse Recovery Time |
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